High-temperature, low threshold current, and uniform operation 1 x 12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in1.5 mu m

Authors
Lin, CC Wu, MC Shiao, HP Liu, KS
Citation
Cc. Lin et al., High-temperature, low threshold current, and uniform operation 1 x 12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in1.5 mu m, IEEE DEVICE, 46(8), 1999, pp. 1614-1618
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
8
Year of publication
1999
Pages
1614 - 1618
Database
ISI
SICI code
0018-9383(199908)46:8<1614:HLTCAU>2.0.ZU;2-O
Abstract
In this paper, we describe the fabrication of a monolithically integrated 1 x 12 array of 1.5-mu m AlGaInAs/InP strain-compensated multiple-quantum-we ll (MQW) lasers, which has high reliability and highly uniform characterist ics in low threshold current, slope efficiency, and lasing wavelength. Besi des, each diode on the array exhibits a high characteristic temperature of 88 K and a low slope-efficiency drop of less than 1 dB between 20-80 degree s C and a lasing wavelength of 1510 nm at 20 degrees C and 20 mA, Also, the diode on the array has a maximum resonance frequency of above 8 GHz or 3-d B modulation bandwidth of 12 GHz.