Studies of multiplication process of a novel image intensifier of an amplified metal-oxide-semiconductor imager overlaid with electron-bombarded amorphous silicon

We studied the multiplication process of a novel image intensifier (II) of an amplified metal-oxide-semiconductor (MOS) imager (AMI) overlaid with ele ctron-bombarded amorphous silicon (a-Si), by Monte Carlo (MC) simulation. T he electron bombardment gains (EB-gains) of MC simulation for acceleration voltages between 2 and 10 kV coincide well with the measured values, The th reshold voltage of 2 kV is well explained in terms of Bethe's electron beam energy losses of the Al and SixN1-x layers, The penetration depth of an el ectron beam of 10 kV is 0.83 mu m and supports an experimentally safe optim al target thickness (1.2-1.3 mu m), The standard deviation of lateral sprea d is 2198 Angstrom. The theoretical excess noise coefficient is 1.2 between 7 and 1.3 kV, which coincides exactly with the measured value.