Two-dimensional doping profile characterization of MOSFET's by inverse modeling using I-V characteristics in the subthreshold region

In this paper, we present a new technique for the characterization of two-d imensional (2-D) doping profiles in deep submicron MOSFET's using current-v oltage (I-V) characteristics in the subthreshold region. The main advantage s of the technique are as follows. 1) It is capable of extracting 2-D dopin g profile (including channel-length) of deep submicron devices because of i ts immunity to parasitic resistance, capacitance, noise, and fringing elect ric fields. 2) It does not require any special test structures since only s ubthreshold I-V data are used. 3) It is nondestructive, 4) It has very litt le dependence on mobility and mobility models, 5) It is easy to use since d ata collection and preparation are straightforward. 6) It can be extended t o the accurate calibration of mobility and mobility models using I-V charac teristics at high current levels, because errors associated with uncertaint ies in doping profiles are removed.