A temperature-dependent DC model for quarter-micron LDD pMOSFET's operating in a Bi-MOS structure

A temperature-dependent analytical model for deep submicrometer LDD p-chann el devices operating in a Bi-MOS structure is reported for the first time, This model is based on experimental data obtained from 0.25-mu m process wa fers with a wide range of technologies (0.25-1.0 mu m). The measurements ha ve been performed within the temperature range 223-398 K (-50 degrees C to +125 degrees C), The model accounts for the effects of independently biasin g the source, drain, gate and body potentials, scaling, and the influence o f temperature on the threshold voltage and the device currents, The effect of temperature on the device transconductance and the output conductance ha ve also been examined, The results revealed that close agreement between th e analytical model and the experimental has been achieved. Comparisons betw een the principal MOS current and the lateral bipolar current have been mad e to demonstrate the improvement of the latter with temperature fur the qua rter-micron devices.