AC floating body effects and the resultant analog circuit issues in submicron floating body and body-grounded SOI MOSFET's

We report the extensive study on ac Boating body effects of different SOI M OSFET technologies. Besides the severe kink and resultant noise overshoot a nd degraded-distortion in partially depleted (PD) Boating body SOI MOSFET's , we have investigated the residue ac floating body effects in fully deplet ed (FD) floating body SOI MOSFET's, and the different body contacts on PD S OI technologies. It is important to note that there is a universal correlat ion between ac kink effect and Lorentzian-like noise overshoot regardless o f whether the body is floating or grounded. In addition, it was found that third-order harmonic distortion is very sensitive to floating body induced kink or deviation on output conductance due to the finite voltage drop of b ody resistance. These results provide device design guidelines for SOI MOSF ET technologies to achieve comparable low-frequency noise and linearity wit h Bulk MOSFET's.