A study of interface trap generation by Fowler-Nordheim and substrate-hot-carrier stresses for 4-nm thick gate oxides

The generation of interface traps by different stresses to 4-nm thick SiO2 gate oxide is studied. Four different kinds of constant current stresses we re applied, The interface-trap density (D-it) generation due to hot holes u nder V-G < 0 Fowler-Nordheim (FN) stress was characterized using quantum-yi eld measurement and substrate-hot-hole (SHH) stress, The interface-trap den sity (D-it) generated by SHH stress increases as gate-oxide field increases , Substrate-hot-electron (SHE) stress generates much less interface-trap de nsity (D-it) than SHH stress, It is also observed that N2O-grown gate-oxide has smaller hole-injection probability but larger electron-injection proba bility than O-2-grown oxide. N2O-grown gate oxide is shown to have less SHH stress-induced interface traps than O-2-grown oxide in p-channel metal-oxi de-semiconductor field-effect transistor (MOSFET) devices.