Modeling and simulation of single- and multiple-gate 2-D MESFET's

Citation
B. Iniguez et al., Modeling and simulation of single- and multiple-gate 2-D MESFET's, IEEE DEVICE, 46(8), 1999, pp. 1742-1748
Citations number
17
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
8
Year of publication
1999
Pages
1742 - 1748
Database
ISI
SICI code
0018-9383(199908)46:8<1742:MASOSA>2.0.ZU;2-E
Abstract
We describe a physically based model for a two-dimensional (2-D) MESFET, a novel hetero-dimensional transistor, The model is valid for a "single" gate in which the sidewall contacts are biased together, a dual-gate configurat ion in which the gates are biased independently, and a multiple-gate config uration for three or more side gates. The model has been implemented in the circuit simulator AIM-SPICE, The modeling results are in good agreement wi th the experimental data.