We describe a physically based model for a two-dimensional (2-D) MESFET, a
novel hetero-dimensional transistor, The model is valid for a "single" gate
in which the sidewall contacts are biased together, a dual-gate configurat
ion in which the gates are biased independently, and a multiple-gate config
uration for three or more side gates. The model has been implemented in the
circuit simulator AIM-SPICE, The modeling results are in good agreement wi
th the experimental data.