An analytical model for interaction of SIPOS layer with underlying siliconof SOI RESURF devices

Citation
Sk. Chung et Dk. Shin, An analytical model for interaction of SIPOS layer with underlying siliconof SOI RESURF devices, IEEE DEVICE, 46(8), 1999, pp. 1804-1807
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
8
Year of publication
1999
Pages
1804 - 1807
Database
ISI
SICI code
0018-9383(199908)46:8<1804:AAMFIO>2.0.ZU;2-#
Abstract
An analytical model for interaction of semi-insulating polycrystalline sili con (SIPOS) layer with underlying silicon of SOI RESURF devices fs presente d which allows a clear picture of the potentials in the two regions coupled through the device parameters including the interface oxide thickness betw een the regions. The improvement in the breakdown voltage due to the presen ce of SIPOS layer is demonstrated, Numerical simulations are shown to suppo rt the analytical model.