An analytical model for interaction of SIPOS layer with underlying siliconof SOI RESURF devices

An analytical model for interaction of semi-insulating polycrystalline sili con (SIPOS) layer with underlying silicon of SOI RESURF devices fs presente d which allows a clear picture of the potentials in the two regions coupled through the device parameters including the interface oxide thickness betw een the regions. The improvement in the breakdown voltage due to the presen ce of SIPOS layer is demonstrated, Numerical simulations are shown to suppo rt the analytical model.