Radiative centers in layer semiconductor p-GaSe doped with Mn

Authors
Shigetomi, S Ikari, T Nakashima, H
Citation
S. Shigetomi et al., Radiative centers in layer semiconductor p-GaSe doped with Mn, JPN J A P 1, 38(6A), 1999, pp. 3506-3507
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
6A
Year of publication
1999
Pages
3506 - 3507
Database
ISI
SICI code
Abstract
The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concent ration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.