Highly conducting undoped mu c-SiO : H films prepared by RF glow discharge

Highly conducting undoped mu c-SiO:H film of sigma(D) = 3 x 10(-2) S.cm(-1) , Delta E = 0.14 eV and sigma(ph) = 8 x 10(-3) S.cm(-1) was obtained from h igh H-2-diluted plasma at a moderately high RF power and substrate temperat ure (T-s) by the plasma enhanced chemical vapour deposition (PECVD) process . At higher T-s and in improved mu c-networks H-content reduced, however O- incorporation increased. Crystallinity of the films was identified by Raman scattering and transmission electron microscope (TEM) studies. Sharp cryst allographic rings in the electron diffraction pattern identified (111), (22 0), (311) planes of c-Si and the TEM micrograph exhibited a uniform and den se distribution of crystallites with a range of diameters from 50-200 Angst rom.