Straight quantum wires self-formed by growing GaP/InP short-period superlattices on GaAs(011) substrate

Quantum wires (QWRs) are self-formed by strain-induced composition modulati on while growing (GaP)(n)(InP)(m) short-period superlattices (SLs) on GaAs( 011) substrates by gas source MBE. Improvements in straightness, uniformity and length of these QWRs are observed, compared with those on GaAs(100) su bstrates. The. QWR direction is parallel to the [01 (1) over bar] direction and is mainly determined by the easy migration direction of group III atom s on the surface Multilayer quantum wires (MQWRs), self-formed while growin g (GaP)(n)(InP)(m) SL/InGaP multilayers exhibit strong polarization anisotr opy of as large as 71% in their photoluminescence (PL) emission. Temperatur e-insensitive variation of the PL peak energy is observed in these MQWR str uctures.