Piezoelectric properties and acoustic wave detection of Pb(Zr0.52Ti0.48)O-3 thin films for microelectromechanical systems sensor

Ferroelectric Pb(Zr0.52Ti0.48)O-3 thin films were deposited on Pt/TiO2/SiO2 /Si substrates by the sol-gel technique. It was found that above 550 degree s C the film transforms completely to the perovskite End forms a typical fe rroelectric polarization-electric field (P-E) hysteresis loop. The effectiv e d(33) of piezoelectric PZT films was measured using a Michelson interfero meter. The piezoelectric hysteresis loop was measured according to de bias Voltage and the maximum piezoelectric coefficient for the 0.48-mu m-thick p oled film was about 130 pm/V at -3 V. Acoustic emission (AE) wave propagati on through PZT films connected to a charge amplifier was observed. These pr operties suggested that PZT film is a very promising material for integrate d AE sensor applications, with promise for improved reliability.