Dislocation pileups in nanocrystalline materials

Authors
Qin, W Chen, ZH Huang, PY Zhuang, YH
Citation
W. Qin et al., Dislocation pileups in nanocrystalline materials, J ALLOY COM, 289(1-2), 1999, pp. 285-288
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
289
Issue
1-2
Year of publication
1999
Pages
285 - 288
Database
ISI
SICI code
0925-8388(19990720)289:1-2<285:DPINM>2.0.ZU;2-S
Abstract
The limitation that the dislocation pileup model holds in the individual gr ains of nanocrystalline materials is analyzed qualitatively. It is shown th at the microstructure of nanocrystalline materials has a decisive effect on the formation of dislocation pileups in the grains. The theoretical result s can explain the experimental observations well. (C) 1999 Elsevier Science S.A. All rights reserved.