Soft-landed ion diffusion studies on vapor-deposited hydrocarbon films

Citation
Aa. Tsekouras et al., Soft-landed ion diffusion studies on vapor-deposited hydrocarbon films, J CHEM PHYS, 111(5), 1999, pp. 2222-2234
Citations number
22
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CHEMICAL PHYSICS
ISSN journal
00219606 → ACNP
Volume
111
Issue
5
Year of publication
1999
Pages
2222 - 2234
Database
ISI
SICI code
0021-9606(19990801)111:5<2222:SIDSOV>2.0.ZU;2-#
Abstract
Cesium and hydronium ions were deposited with a "soft-landing" ion beam (1 eV) on n-hexane and 3-methyl-pentane vapor-deposited thin films on a Pt (11 1) surface at 27 K. Dielectric properties and ion migration were studied du ring the ion deposition and during a temperature ramp up to the desorption temperature of the molecular films. The ions were found to migrate through amorphous versions of these films as expected by simple viscosity models ne ar 90 K with ion mobilities of about 10(-18) m(2) V-1 s(-1). No, or very li mited, diffusion was observed through crystalline films. The n-hexane films crystallize during the ion motion. Analysis of this permits the estimation that average diffusional motion for a neutral hexane during crystallizatio n is about 1 molecular diameter. (C) 1999 American Institute of Physics. [S 0021-9606(99)72127-6].