4 W QUASI-CONTINUOUS-WAVE OUTPUT POWER FROM 2 MU-M ALGAASSB INGAASSB SINGLE-QUANTUM-WELL BROADENED WAVE-GUIDE LASER-DIODES/

Authors
GARBUZOV DZ MARTINELLI RU LEE H MENNA RJ YORK PK DIMARCO LA HARVEY MG MATARESE RJ NARAYAN SY CONNOLLY JC
Citation
Dz. Garbuzov et al., 4 W QUASI-CONTINUOUS-WAVE OUTPUT POWER FROM 2 MU-M ALGAASSB INGAASSB SINGLE-QUANTUM-WELL BROADENED WAVE-GUIDE LASER-DIODES/, Applied physics letters, 70(22), 1997, pp. 2931-2933
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
22
Year of publication
1997
Pages
2931 - 2933
Database
ISI
SICI code
0003-6951(1997)70:22<2931:4WQOPF>2.0.ZU;2-1
Abstract
AlGaAsSb/InGaAsSb single-quantum-well (SQW) laser diodes emitting at 2 mu m were fabricated and tested. At 10-15 degrees C, the uncoated SQW lasers with 2-3 mm cavity lengths exhibit a threshold current density of 115 A/cm(2), a continuous-wave output power of 1.9 W, a differenti al efficiency of 53%, and a quasi-continuous-wave output power of 4 W. Their performance deteriorates rapidly as output losses increase beyo nd 10 cm(-1). (C) 1997 American Institute of Physics.