Ab initio calculations predict that Be is a shallow acceptor in GaN. I
ts thermal ionization energy is 0.06 eV in wurtzite GaN; the level is
valence resonant in the zincblende phase. Be incorporation is severely
limited by the formation of Be3N2. It is shown, however, that co-inco
rporation with reactive species can enhance the solubility. H-assisted
incorporation should lead to high doping levels in metal-organic-chem
ical-vapor deposition growth after post-growth annealing at about 850
K. Be-O co-incorporation produces high Be and O concentrations at mole
cular beam epitaxy growth temperatures. (C) 1997 American Institute of
Physics.