A TUNNELING FIELD-EFFECT TRANSISTOR WITH 25 NM METALLURGICAL CHANNEL-LENGTH

A tunneling field-effect transistor with an ultrashort channel-length of 25 nm has been experimentally realized using InAs/AlSb heterostruct ures. The conduction between the source and the drain is through a seq uential process, including tunneling and drift-diffusion mechanisms. A ccording to its operating principle, the transistor is inherently free of the conventional shea-channel effects. The results demonstrate a n ew scheme of building nanometer-scale transistors. (C) 1997 American I nstitute of Physics.