GROWTH AND CHARACTERIZATION OF (INSB)(M)(INP)(N) SHORT-PERIOD SUPERLATTICES

Authors
UTZMEIER T ARMELLES G POSTIGO PA BRIONES F CASTRILLO P SANZHERVAS A AGUILAR M ABRIL EJ
Citation
T. Utzmeier et al., GROWTH AND CHARACTERIZATION OF (INSB)(M)(INP)(N) SHORT-PERIOD SUPERLATTICES, Applied physics letters, 70(22), 1997, pp. 3017-3019
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
22
Year of publication
1997
Pages
3017 - 3019
Database
ISI
SICI code
0003-6951(1997)70:22<3017:GACO(S>2.0.ZU;2-P
Abstract
Shea period superlattices of (InSb)(m)(InP)(n) were grown on semi-insu lating (001) InP substrates by atomic layer molecular beam epitaxy. Hi gh resolution x-ray diffractometry was used to study the structural qu ality of the superlattices. Raman spectroscopy, in conjunction with th eoretical calculations, provided information about intermixing at the interfaces. (C) 1997 American Institute of Physics.