SURFACE-MORPHOLOGY AND OPTICAL CHARACTERIZATION OF GAN GROWN ON ALPHA-AL2O3(0001) BY RADIO-FREQUENCY-ASSISTED MOLECULAR-BEAM EPITAXY

Authors
YEADON M HAMDANI F XU GY SALVADOR A BOTCHKAREV AE GIBSON JM MORKOC H
Citation
M. Yeadon et al., SURFACE-MORPHOLOGY AND OPTICAL CHARACTERIZATION OF GAN GROWN ON ALPHA-AL2O3(0001) BY RADIO-FREQUENCY-ASSISTED MOLECULAR-BEAM EPITAXY, Applied physics letters, 70(22), 1997, pp. 3023-3025
Citations number
32
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
22
Year of publication
1997
Pages
3023 - 3025
Database
ISI
SICI code
0003-6951(1997)70:22<3023:SAOCOG>2.0.ZU;2-C
Abstract
Wurtzitic GaN epilayers have been grown on sapphire (0001) substrates by radio-frequency atomic nitrogen plasma-assisted molecular beam epit axy. Atomic force microscopy, reflectivity, and photoluminescence meas urements have been performed in order to investigate the influence of in situ and ex situ annealing on the surface morphology and optical pr operties. We demonstrate a significant improvement in both the structu ral and optical quality of our GaN epilayers using in situ annealed lo w-temperature-deposited GaN buffer layers. (C) 1997 American Institute of Physics.