Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

The interfacial state density existing in metal-insulator-semiconductor (MI S) structures was measured by deep level transient spectroscopy technique. The MIS structures were fabricated on InP substrates by direct deposition o f silicon nitride (SiNxH) thin films by the electron cyclotron resonance me thod. In this work, we show that interfacial state density can be diminishe d without degrading electrical insulator properties by fabricating MIS stru ctures based on a bi-layered insulator with different insulator composition s and different thickness. The effect of rapid thermal annealing treatment has been analysed in detail in these samples. An interface state density as low as 3x 10(11) cm(-2) eV(-1) was measured in some structures.