Electrical carrier activation in Zn+ implanted and low-power pulsed-laser annealed InP in nitrogen atmosphere

Low-power pulsed-laser annealing was applied to Zn+-implanted InP samples. In order to avoid surface oxidation during the treatment, the laser irradia tion was carried out in inert ambients of different gases (Ar or N-2) at di fferent pressures. Reflection high energy electron diffraction (RHEED), Rut herford backscattering spectroscopy (RBS) and electrical measurements were used to analyse the physical properties of the samples before and after the laser annealing process. In particular, it has been possible to demonstrat e that the chemical properties of the gas used play a crucial role in the e lectrical carrier activation (about 80%) of the processed InP sample.