Citation
L. Quintanilla et al., Electrical characterization of deep levels existing in fully implanted andrapid thermal annealed p(+)n InP junctions, J MAT S-M E, 10(5-6), 1999, pp. 413-418
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522
→ ACNP
Volume
10
Issue
5-6
Year of publication
1999
Pages
413 - 418
Database
ISI
SICI code
0957-4522(199907)10:5-6<413:ECODLE>2.0.ZU;2-1
Abstract
In this paper, the deep levels existing in fully implanted and rapid therma
l annealed p(+)n junctions obtained by Mg/Si or Mg/P/Si implantations on no
minally undoped n-type InP substrates were detected and characterized by th
e correlation of two electrical techniques: deep level transient spectrosco
py (DLTS) and capacitance-voltage transient technique (CVTT). Two ion impla
ntation-induced deep levels (at 0.25 and 0.27 eV below the conduction band)
were detected by DLTS. Several characteristics of these traps were derived
from CVTT measurements, paying special attention to their physical nature.