Peculiarities of color center production and their photostimulable recombin
ation in doped alkali halide thin films have been analysed with regard to t
heir availability as active highly sensitive luminescent storage media for
fast optical data processing. It is concluded that the radiation defects in
all the doped systems are spatially distributed in the near vicinity of th
e dopants. The influence of the surface is clearly pronounced in polycrysta
lline films. The escape of unrelaxed H-centers from the surface considerabl
y changes the distribution of F- and dopant hole centers, forming an intera
cting F-center chain near the surface of grains. This is why temperature-in
dependent F-center production and photostimulable recombination between dis
tant pairs is observed in doped nanostructures. The main functional abiliti
es of the active media are also discussed.