Active media for optical data processing in optoelectronic devices

Authors
Citation
G. Vale, Active media for optical data processing in optoelectronic devices, J MAT S-M E, 10(5-6), 1999, pp. 451-454
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
10
Issue
5-6
Year of publication
1999
Pages
451 - 454
Database
ISI
SICI code
0957-4522(199907)10:5-6<451:AMFODP>2.0.ZU;2-R
Abstract
Peculiarities of color center production and their photostimulable recombin ation in doped alkali halide thin films have been analysed with regard to t heir availability as active highly sensitive luminescent storage media for fast optical data processing. It is concluded that the radiation defects in all the doped systems are spatially distributed in the near vicinity of th e dopants. The influence of the surface is clearly pronounced in polycrysta lline films. The escape of unrelaxed H-centers from the surface considerabl y changes the distribution of F- and dopant hole centers, forming an intera cting F-center chain near the surface of grains. This is why temperature-in dependent F-center production and photostimulable recombination between dis tant pairs is observed in doped nanostructures. The main functional abiliti es of the active media are also discussed.