Composition dependence of electrical properties of Al-Te glasses

Citation
S. Murugavel et S. Asokan, Composition dependence of electrical properties of Al-Te glasses, J NON-CRYST, 249(2-3), 1999, pp. 145-149
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
249
Issue
2-3
Year of publication
1999
Pages
145 - 149
Database
ISI
SICI code
0022-3093(199907)249:2-3<145:CDOEPO>2.0.ZU;2-M
Abstract
The electrical resistivity of binary AlxTe100-x glasses of different compos itions (17 less than or equal to x less than or equal to 30), is measured a s a function of temperature in the range 300-180 K. The conductivity activa tion energy (Delta E), estimated from the resistivity variation with temper ature, is found to decrease with increasing Al content and to exhibit a min imum at x = 24 at.% of Al. The initial decrease in Delta E has been explain ed on the basis of the creation of additional positively charged defect sta tes due to the tetrahedral and octahedral coordinations of Al atoms. The pr esence of these additional defect centers causes an upset in the balance be tween the oppositely charged defect states, which subsequently shifts the F ermi level towards the valence band. The increase in activation energy with composition above x = 24 has been attributed to the saturation of these ex tra charged defect states. (C) 1999 Elsevier Science B.V. All rights reserv ed.