Boron ultrashallow junction formation in silicon by low-energy implantation and rapid thermal annealing in inert and oxidizing ambient

For the formation of ultrashallow junctions, a controlled gaseous ambient d uring rapid thermal annealing is indispensible. To understand the diffusion /activation mechanism, the influencing and depending variables have to be c larified precisely. Ion implantations of 1 keV boron at a fluence of Phi ap proximate to 1 x 10(15) cm(-2) are annealed isothermally for 10 s at 1000, 1050, and 1100 degrees C in an AST2800 epsilon rapid thermal processing sys tem under controlled concentrations of oxygen in nitrogen ambient (0-1 ppm up to 1%). The concentration-depth profiles, measured by secondary ion mass spectroscopy, are analyzed within the framework of the kick-out model invo lving diffusion enhancement via supersaturation of silicon self-interstitia ls and the Fermi-level effect. The validity of this interpretation is suppo rted by the simulated results which are in good agreement with experimental data. Two input parameters for the SSUPREM IV simulator yield finite value s of silicon self-interstitial supersaturation as a function of temperature and oxygen concentrations, values for the boron diffusion coefficient via neutral and positively charged silicon self-interstitials, and data for tra nsient enhanced diffusion. After rapid thermal annealing for 10 s at 1050 d egrees C, the junctions vary within 800-1400 Angstrom depending on the anne aling ambient. (C) 1999 The Electrochemical Society. All rights reserved.