A continuum model for the inductively coupled plasma reactor in semiconductor processing

A comprehensive continuum model is presented for the analysis of high-densi ty plasma reactors widely used in semiconductor processing. The model coupl es plasma transport, neutral species dynamics, gas flow, heat transfer, and plasma power coupling from an external source. The governing transport equ ations are served along with Maxwell's equations for a multicomponent, mult itemperature system with inductively coupled power deposition. The model an d code are applied to a nitrogen discharge in an inductively coupled plasma reactor, and the predictions agree well with the experimental data. The ef fect of self-consistent modeling of gas flow and gas heat transfer is syste matically examined and it is found to affect plasma density and uniformity at low pressures. (C) 1999 The Electrochemical Society. All rights reserved .