Influence of coil power on the etching characteristics in a high density plasma etcher

We present the effects of applied coil power on silicon etching in a high d ensity inductively coupled plasma etcher in both the isotropic and anisotro pic regimes. The experimentally obtained response surfaces were generated w hile changing four etching variables for the isotropic case and eight etchi ng variables for the anisotropic case. The measured performance contained i n this report serves as a guide to tailor etching conditions to produce iso tropic profiles while etching with pure SF6, and also to optimize anisotrop ic profiles when using time multiplexed deep etching. The response surfaces contained herein are useful for micromachining high aspect ratio structure s. (C) 1999 The Electrochemical Society. All rights reserved.