Metal-insulator-semiconductor Schottky barrier structures fabricated usinginterfacial BN layers grown on GaN and SiC for optoelectronic device applications
D. Starikov et al., Metal-insulator-semiconductor Schottky barrier structures fabricated usinginterfacial BN layers grown on GaN and SiC for optoelectronic device applications, J VAC SCI A, 17(4), 1999, pp. 1235-1238
Metal-insulator-semiconductor Schottky barrier structures on GaN and 6H-SiC
using highly stable interfacial BN layers have been investigated. As repor
ted earlier, such structures fabricated with Ti contacts are capable of wit
hstanding up to 350 and 600 degrees C when based on 6H-SiC and GaN, respect
ively. In this work we fabricated diode structures using interfacial BN lay
ers and optically transparent Au contacts. Visible-blind photosensitive str
uctures on GaN and 6H-SiC and prebreakdown light-emitting diode (LED) struc
tures on 6H-SiC have been characterized. The radiant and spectral sensitivi
ties of the photosensitive structures were measured in the range of 200-400
nm. The potential barrier heights determined from photoresponse measuremen
ts were 2.7 and 2.88 eV for GaN- and SiC-based samples, respectively. The s
pectrum of 6H-SiC and p-GaN-based prebreakdown LED structures measured thro
ugh transparent Au electrodes extended to the ultraviolet region. The optic
al emission power of the 6H-SiC-based LED structures measured in the range
200-1100 nm saturated to about 10(-8) W at current densities close to 200 A
/cm(2). Prospects for applications of the diode structures described in adv
anced visible-blind optoelectronic sensors are discussed. (C) 1999 American
Vacuum Society. [S0734-2101(99)15804-4].