A method for chemical imaging of CaF2, CaF1, and Si by scanning tunneling s
pectroscopy is presented. This method is utilized for identifying the growt
h regimes of CaF2 and CaF1 on stepped Si(111)7X7. For CaF2 on Si(111), we f
ind random islands, stripes, and ordered islands, depending on the supersat
uration. For CaF2 on a CaF1 monolayer on Si(111), we find regular stripes t
hat are continuous and separated from each other. CaF2 structures are attac
hed to the bottom edge of a step when growing directly on Si, but they pref
er the top of a step edge when growing on a CaF1 buffer layer. These highly
regular, linear arrays of CaF2 stripes and dots can serve as masks for ass
embling more sophisticated nanostructures. (C) 1999 American Vacuum Society
. [S0734-2101(99)12204-8].