Self-assembled CaF2 nanostructures on silicon

Citation
Dy. Petrovykh et al., Self-assembled CaF2 nanostructures on silicon, J VAC SCI A, 17(4), 1999, pp. 1415-1419
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
17
Issue
4
Year of publication
1999
Part
1
Pages
1415 - 1419
Database
ISI
SICI code
0734-2101(199907/08)17:4<1415:SCNOS>2.0.ZU;2-D
Abstract
A method for chemical imaging of CaF2, CaF1, and Si by scanning tunneling s pectroscopy is presented. This method is utilized for identifying the growt h regimes of CaF2 and CaF1 on stepped Si(111)7X7. For CaF2 on Si(111), we f ind random islands, stripes, and ordered islands, depending on the supersat uration. For CaF2 on a CaF1 monolayer on Si(111), we find regular stripes t hat are continuous and separated from each other. CaF2 structures are attac hed to the bottom edge of a step when growing directly on Si, but they pref er the top of a step edge when growing on a CaF1 buffer layer. These highly regular, linear arrays of CaF2 stripes and dots can serve as masks for ass embling more sophisticated nanostructures. (C) 1999 American Vacuum Society . [S0734-2101(99)12204-8].