In this article, we present a;new method for fabricating precisely defined
nanometer scale photoresist wire patterns. The Langmuir technique was utili
zed to form high aspect ratio lamellae, or wire patterns, of Ag nanocrystal
s at the air/water interface, and these patterns were transferred onto resi
st-coated substrates as a Langmuir-Schaeffer film and as a shadowmask. The
wire patterns were transferred to the photoresist material by spatially sel
ective electron beam exposure on the Ag nanocrystal wire shadowmask. Monte
Carlo simulation was done to estimate the electron stopping power for the A
g nanocrystal shadowmask at low voltage. (C) 1999 American Vacuum Society.
[S0734-2101(99)20104-2].