Synchrotron-radiation stimulated desorption of SiO2 thin films on Si(111) surfaces observed by scanning tunneling microscopy

Authors
Miyamae, T Uchida, H Munro, IH Urisu, T
Citation
T. Miyamae et al., Synchrotron-radiation stimulated desorption of SiO2 thin films on Si(111) surfaces observed by scanning tunneling microscopy, J VAC SCI A, 17(4), 1999, pp. 1733-1736
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
17
Issue
4
Year of publication
1999
Part
1
Pages
1733 - 1736
Database
ISI
SICI code
0734-2101(199907/08)17:4<1733:SSDOST>2.0.ZU;2-3
Abstract
Synchrotron radiation (SR) stimulated desorption of silicon dioxide thin fi lms was studied using scanning tunneling microscopy (STM), low energy elect ron diffraction (LEED), and Auger electron spectroscopy. Reconstructed Si(1 11)-7X7 patterns were observed by LEED after 2 h SR irradiation at a surfac e temperature of 700 degrees C. The STM images show an atomically flat Si(1 11)-7X7 surface. STM topographs of SR-irradiated surfaces suggest that the oxide desorption; mechanism is completely different from that of thermal de sorption of SiO2 film. These results indicate that the atomically flat Si s urface can be obtained at low temperatures by using this technique. (C) 199 9 American Vacuum Society. [S0734-2101(99)04804-6].