Large diameter silicon technology and epitaxy

The intermediate results of Super Silicon Crystal project are introduced to serve a production platform of 400 mm silicon. SSi has already installed a 400 mm CZ furnace. Raw materials are sufficiently applicable for 36 inch h ot zone. We discuss a contact part between a crystal suspending system and a subsidiary cone. A successful handling system for a fragile quartz crucib le and for a heavy silicon crystal is also described. A wire saw for 400 mm wafers has already been installed in SSi and sliced 400 mm wafers are demo nstrated. For 400 mm epitaxial wafers, we describe pretreatment for epitaxi al growth at low temperature. (C) 1999 Elsevier Science B.V. All rights res erved.