Study of oxygen transport in Czochralski growth of silicon

The present status and special features of experimental analysis and numeri cal modelling of oxygen transport in the Czochralski growth of silicon is t reated. The solubility of oxygen in liquid Si is discussed in detail as thi s parameter is used as a boundary condition (oxygen source) in the numerica l process models. The possibility of in situ measurement of the oxygen dist ribution in the melt in dependence from boundary conditions by using an ele ctrochemical sensor is shown. Model conceptions for a numerical simulation of the oxygen transport in Czo chralski melts are discussed in detail. The problem of boundary layer resol ution is analysed, examples how to solve it are given. A quantitative model ling of the oxygen transport suffers at present from the fact that the exis ting turbulence models are not adequate to predict the velocity field preci sely enough. (C) 1999 Elsevier Science B.V. All rights reserved.