Characterization of 300 mm silicon-polished and EPI wafers

Authors
Shih, S Au, C Yang, Z Messina, T Goodall, RK Huff, HR
Citation
S. Shih et al., Characterization of 300 mm silicon-polished and EPI wafers, MICROEL ENG, 45(2-3), 1999, pp. 169-182
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
45
Issue
2-3
Year of publication
1999
Pages
169 - 182
Database
ISI
SICI code
0167-9317(199907)45:2-3<169:CO3MSA>2.0.ZU;2-M
Abstract
Maturity of 300 mm polished wafers and early epi wafers were evaluated in r espects of particles, flatness, metal contamination, and epitaxy thickness. Data of 300 mm polished wafers showed encouraging characteristics comparab le to state-of-the-art 200 mm prime wafers. Preliminary characterization of 300 mm epi wafers revealed that dominant localized light scatterers (LLS) with sizes more than 1 mu m were epitaxy growth-related surface or bulk imp erfections. (C) 1999 Elsevier Science B.V. All rights reserved.