Experimental verification of different slip generation models for 300 mm wafers processed in a fast ramp vertical furnace

This paper presents the results of 300 mm wafer slip tests conducted using Semitool's 300 mm Express furnace at process temperatures ranging from 900 degrees C to 1150 degrees C. X-ray diffraction topography is used to search for the presence of dislocations in the processed wafers. The experimental data is evaluated against the predictions of the wafer stress analysis cod e MacWafer/PCWafer [R. Nilson, S. Griffiths, MacWafer Computer Software, Sa ndia National Laboratories, Livermore, CA 94551-0969]. This code enables th e application and evaluation of different slip generation models [M. Schrem s ct al., in: H.R. Huff, W. Bergholz, K. Sumino (Eds.), Semiconductor Silic on '94, The Electrochemical Society, N.J., 1994, pp. 1050-1063; B. Leroy, C . Plougonven, J. Electrochemical Society 127 (4) (1980) 961-970]. Instances of wafer slip are observed only at wafer support points. The occurrence of wafer slip is best described by the model attributable to reference [B. Le roy, C. Plougonven, J. Electrochemical Society 127 (4) (1980) 961-970 (1980 )] assuming an oxygen precipitation level of about 4 ppm. (C) 1999 Elsevier Science B.V. All rights reserved.