Study on the Al/silicon rich oxide/Si structure as a surge suppressor, DC,frequency response and modeling

In this work the possibility of using the Al/SRO/Si device as a surge suppr essor is studied. DC, AC, and the frequency response of the device were inv estigated. Also the device was exposed to high voltage peaks. The High volt age peaks were generated using the human body model. Two devices were teste d: simple MOS like capacitors, and input pads made of Al/SRO/Si connected t o the gate of MOS transistors. Results show that these devices can uphold v oltage peaks as big as 66 MV/cm and that they can be used for low frequency applications. It is also shown that, transistor gates connected to these i nput pads support higher voltage peaks compared with gates connected to sta ndard input pad. (C) 1999 Elsevier Science Ltd. All rights reserved.