M. Manimaran et Pr. Vaya, Realization of nanopillars on GaAs quantum well structure grown by molecular beam epitaxy, MICROELEC J, 30(9), 1999, pp. 899-903
A double barrier heterostructure grown on a n(++) GaAs substrate by Molecul
ar Beam Epitaxy (MBE) was used for the fabrication of random dot pillar arr
ays of p-i-n quantum well nanoscale devices. The nanostructure was fabricat
ed so as to get the vertical confinement of carriers within the undoped GaA
s quantum well (QW) layer of 9 nm thick sandwiched between two Al0.33Ga0.67
As of 11 nm thick barrier layers using the conventional lithographic and Re
active Ion Etching (RIE) techniques. The width of the pillars had the range
of 10-50 nm and the height of the pillars varied from 185 to 250 nm by con
trolling the etching time from 90 to 180 s, respectively. These nanopillars
were characterized by the SEM and the nanoscale structure of the pillars w
as studied by the Scanning Tunneling Microscope (STM) by applying a negativ
e bias voltage of 3635 mV and the tunneling current of 2.61 nA. The light e
mission was detected from the nanopillars when applying a forward bias volt
age of 1.3 V at 4 K and the emitted light was observed at 830 nm. (C) 1999
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