Influence of the source inductance parasitic effect on the conversion gainof an HEMT gate mixer

Authors
Allam, R Kolanowski, C Paillot, JM Duvanaud, C Crosnier, Y
Citation
R. Allam et al., Influence of the source inductance parasitic effect on the conversion gainof an HEMT gate mixer, MICROW OPT, 22(3), 1999, pp. 149-151
Citations number
5
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
22
Issue
3
Year of publication
1999
Pages
149 - 151
Database
ISI
SICI code
0895-2477(19990805)22:3<149:IOTSIP>2.0.ZU;2-S
Abstract
This paper examines the influence of the presence of source inductance on t he conversion gain of a gate mixer. Two effects are observed: degradation o f the gain, and an increase of the local oscillator level power necessary t o obtain the maximum gain. Nonlinear simulations, theoretical calculations, as well as experimental data demonstrate that these effects become more im portant in the millimeter-wave range. (C) 1999 John Wiley & Sons, Inc.