H. Sternschulte et al., Control of lithium-t-butoxide addition during chemical vapour deposition of Li-doped diamond films by optical emission spectroscopy, PHYS ST S-A, 174(1), 1999, pp. 65-72
The potential of in situ lithium doping of diamond during microwave plasma
chemical vapour deposition (MWPCVD) using a source of solid lithium-t-butox
ide has been studied. It is shown that atomic lithium emission lines can be
easily detected in the plasma by optical emission spectroscopy (OES). It w
as found that for a fixed fraction of the Li precursor in the feed gas a va
riation of the experimental conditions in the CVD reactor can drastically c
hange the Li concentration in the plasma. The experimental results demonstr
ate that an optical control of the Li concentration in the plasma is indisp
ensible. Elastic recoil detection (ERD) measurements clearly established th
at Li was incorporated into the diamond films in concentrations ranging fro
m 40 up to 300 ppm. Etching of plasma exposed steel components in the react
or due to Li addition and the subsequent incorporation of iron, cobalt, and
nickel into the films could be strongly reduced by replacing these compone
nts by graphite parts.