Effect of stress on optical and ESR lines in CVD diamond

Correlation between the shape of Raman, photoluminescence (PL) and Electron Spin Resonance (ESR) signals in CVD diamond films was examined for both un doped and nitrogen-doped films. No correlation was observed between the shi ft of the diamond Raman line and its linewidth, even for the films produced under essentially the same growth conditions. It was found that the increa se in the width of the diamond Raman peak interrelates with the broadening of zero-phonon PL lines and the changes in the structure of the ESR signal from the substitutional nitrogen (P1) center. Observed changes in the ESR s pectra are interpreted in terms of reduction of the symmetry of the P1 cent er induced by internal stress.