Theory of tunneling magnetoresistance in a junction with a nonmagnetic metallic interlayer

Citation
J. Mathon et A. Umerski, Theory of tunneling magnetoresistance in a junction with a nonmagnetic metallic interlayer, PHYS REV B, 60(2), 1999, pp. 1117-1121
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
2
Year of publication
1999
Pages
1117 - 1121
Database
ISI
SICI code
0163-1829(19990701)60:2<1117:TOTMIA>2.0.ZU;2-V
Abstract
It is demonstrated by numerical evaluation of the real-space Kubo formula t hat the tunneling magnetoresistance (TMR) due to tunneling between two coba lt electrodes separated by a vacuum gap remains nonzero when one of the ele ctrodes is covered with a copper layer. This contradicts the classical theo ry of tunneling that predicts zero TMR. It is shown that a nonzero TMR is d ue to quantum well states in the Cu layer that do not participate in transp ort. Since these only occur in the down-spin channel, their loss from trans port creates a spin asymmetry of electrons tunneling from a Cu overlayer, i .e., nonzero TMR. This mechanism could provide an explanation of the observ ed nonzero TMR for junctions with Cu or Ag interlayers. A simple method for modifying the classical theory of tunneling so that it can describe correc tly tunneling in the presence of quantum well states is proposed and implem ented for the Co junction with a Cu interlayer.