Strongly anisotropic electronic transport at Landau level filling factor nu=9/2 and nu=5/2 under a tilted magnetic field

Citation
W. Pan et al., Strongly anisotropic electronic transport at Landau level filling factor nu=9/2 and nu=5/2 under a tilted magnetic field, PHYS REV L, 83(4), 1999, pp. 820-823
Citations number
19
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
4
Year of publication
1999
Pages
820 - 823
Database
ISI
SICI code
0031-9007(19990726)83:4<820:SAETAL>2.0.ZU;2-D
Abstract
We have investigated the influence of an increasing in-plane magnetic held on the states of half filling of Landau levels (v = 11/2, 9/2, 7/2, and 5/2 ) of a two-dimensional electron system. In the electrically anisotropic pha se at v = 9/2 and 11/2 an in-plane magnetic held of similar to 1-2 T overco mes its initial pinning to the crystal lattice and reorients this phase. In the initially isotropic phases at v = 5/2 and 7/2 an in-plane magnetic hel d induces a strong electrical anisotropy. In all cases, for high in-plane f ields the high-resistance axis is parallel to the direction of the in-plane field.