Influence of additives of silicon carbide and titanium diboride on the compaction during sintering and electrical resistivity of ceramical materials based on Al2O3

Authors
Kondrashev, AI
Citation
Ai. Kondrashev, Influence of additives of silicon carbide and titanium diboride on the compaction during sintering and electrical resistivity of ceramical materials based on Al2O3, POWD MET ME, 37(9), 1998, pp. 504-506
Citations number
13
Categorie Soggetti
Metallurgy
Journal title
POWDER METALLURGY AND METAL CERAMICS
ISSN journal
10681302 → ACNP
Volume
37
Issue
9
Year of publication
1998
Pages
504 - 506
Database
ISI
SICI code
1068-1302(199809/10)37:9<504:IOAOSC>2.0.ZU;2-T
Abstract
The effect of the sintering temperature on the density and electrical resis tivity of Al2O3 based materials containing 30% TiB2 (specimen A) or 30% SiC (specimen B) is studied As the temperature rises in the range 1873-2023 K the relative density of the materials increases from 0.68 to 0.76 (A) and f rom 0.70 to 0.88 (B) the electrical resistivity decreases from 2.6.10(4) to 2.9.10(2) Omega-cm (A) and from 7.4.10(4) to 6.3.10(2) Omega-cm (B). The r esults can be used in the development of corundum-based ceramic heaters.