A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation

A self-Aligned Doped Channel (SADC) is proposed and investigated for the fi rst time. In the SADC process, the channel doping process is carried out by using solid phase diffusion from the gate; hence the doping region is full y self-aligned to the gate, and the junction capacitance can be reduced. In addition, the implantation damage in the channel is reduced. We obtained 0 .25 mu m gate length nMOSFETs with low noise and low power consumption by u sing the SADC structure. Hence, this structure is attractive for small geom etry RF CMOS devices. (C) 1999 Elsevier Science Ltd. All rights reserved.