Formation of palladium-silicided shallow n(+)p junctions by phosphorus implantation into thin Pd or Pd2Si films on a silicon substrate and subsequentanneal

Formation of Pd-silicided shallow n(+)p junctions by implanting P+ ions int o thin Pd or Pd2Si films on a Si substrate and subsequent annealing has bee n studied. Using these schemes, good n(+)p junctions can be formed at low a nnealing temperatures. A Pd2Si-silicided shallow n(+)p junction with a leak age of about 2 nA/cm(2) at -5 V and a junction depth of about 0.1 mu m can be obtained by annealing the sample with P+ implantation into thin Pd2Si fi lms at 700 degrees C. The thermal stability and silicide crystallinity of t hin Pd2Si films on Si can be significantly improved due to the implanted ph osphorus dopant, as compared to the control samples without dopant incorpor ation. (C) 1999 Elsevier Science Ltd. All rights reserved.