A procedure for the extraction of the bulk-charge effect parameter in MOSFET models

A technique is proposed to extract the bulk-charge effect parameter from th e triode region of operation of the MOSFET characteristics. The method invo lves making two measurements of drain current as a function of gate voltage at two small values of the drain voltage. The procedure was tested on synt hetic I-d-V-gs, characteristics modeled with SPICE and simulated by a 2D de vice simulator. It was also applied to measured I-d-V-gs characteristics of real devices. Both constant and normal field dependent mobilities were con sidered for comparison. Very good agreement is obtained between the paramet ers used in modeling and simulation and the extracted values. (C) 1999 Else vier Science Ltd. All rights reserved.