Single Cs adatoms at Si(001)2 x 1 surfaces: a local surface photovoltage imaging study

Citation
D. Gorelik et al., Single Cs adatoms at Si(001)2 x 1 surfaces: a local surface photovoltage imaging study, SURF SCI, 432(3), 1999, pp. 265-278
Citations number
47
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
432
Issue
3
Year of publication
1999
Pages
265 - 278
Database
ISI
SICI code
0039-6028(19990720)432:3<265:SCAASX>2.0.ZU;2-F
Abstract
Local surface photovoltage (SPV) and current imaging, using a scanning tunn eling microscope (STM), were utilized in order to elucidate the effect of a single adsorbed cesium atom on the local electronic structure of p- and n- type Si(001)2 x 1 surfaces, in its vicinity. The Cs adatom gives rise to a small depression at negative sample bias constant current topography (CCT) image. The opposite sides of two adjacent Si dimers appear as protrusions. SPV and current imaging show that the Fermi level is 'softly' pinned at the surface in the location of these protrusions, possibly because of a downsh ift and/or broadening of the pi* band and its screening of the Cs positive charge. (C) 1999 Elsevier Science B.V. All rights reserved.