Relativistic full-potential photoemission for GaAs(110)

Relativistic full-potential photoemission theory is a straightforward gener alization of the original well-established one-step model. This, so far, mo st elaborated version of the theory has been applied to photocurrent calcul ations for the GaAs(110) surface. Here we present angle-resolved ultraviole t photoemission intensities calculated in normal emission for a range of di fferent excitation energies. The investigation is based on a space-filling cell potential, which has been determined self-consistently from a relativi stic full-potential KKR bandstructure calculation. We compare our calculate d photoemission spectra with muffin-tin results as well as with correspondi ng experimental data. From this analysis we obtain an improved agreement be tween experiment and theory, especially in the relative intensities occurri ng in the different photoemission spectra. (C) 1999 Elsevier Science B.V. A ll rights reserved.