Synchrotron radiation-excited glancing incidence XRF for depth profile andthin-film analysis of light elements

First results of depth profile and thin-film analysis by glancing incidence x-ray fluorescence analysis of low-Z elements (carbon to aluminum), usuall y not detectable by conventional instruments, were obtained by synchrotron radiation excitation (SSRL, Beamline III-4) and by a special energy-dispers ive spectrometer with high efficiency for low-energy fluorescence radiation [Ge(HP) detector with an ultra-thin 300 nm entrance window]. The results o f calculations taking into account several sample parameters of interest ag ree with the measurements, Results are presented for the determination of d epth profiles of Na, Mg and Al implanted in Si wafers and for thin films of Al and a C bulk sample. Copyright (C) 1999 John Wiley & Sons, Ltd.