Ey. Sun et al., Debonding behavior between beta-Si3N4 whiskers and oxynitride glasses withor without an epitaxial beta-SiAlON interfacial layer, ACT MATER, 47(9), 1999, pp. 2777-2785
In order to gain insight on the influence of intergranular glass on the fra
cture toughness of silicon nitride, the debonding behavior of the interface
between the prismatic faces of beta-Si3N4 whiskers and oxynitride glasses
was investigated in model systems based on various Si-(Al)-Y(Ln)-O-N (Ln: r
are-earth) oxynitride glasses. It was found that while the interfacial debo
nding strength increased when an epitaxial beta'-SiAlON layer grew on the b
eta-Si3N4 whiskers, the critical angle for debonding was lowered with incre
asing Al and O concentrations in the SiAlON layer. Only in the absence of a
SiAlON epitaxial layer, were debonding conditions altered by residual stre
sses imposed on the interface due to thermal-mechanical mismatch. A possibl
e explanation for the effect of SiAlON formation and its composition on the
debonding behavior is suggested by first-principles atomic cluster calcula
tions. It is concluded that by tailoring the densification additives and he
nce the chemistry of the intergranular glass, ii is possible to improve the
fracture resistance of silicon nitride. (C) 1999 Acta Metallurgica Inc. Pu
blished by Elsevier Science Ltd. All rights reserved.